? 2008 ixys corporation, all rights reserved ds99077b(05/08) v dss = 500v i d25 = 66a r ds(on) 80m t rr 250 ns n-channel enhancement mode avalanche rated, low q g , low intrinsic r g , high dv/dt, low t rr symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c, r gs = 1m 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 66 a i dm t c = 25 c, pulse width limited by t jm 264 a i a t c = 25 c 66 a e as t c = 25 c 4 j dv/dt i s i dm , v dd v dss , t j 150 c 20 v/ns p d t c = 25 c 735 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c v isol 50/60hz, rms t = 1min 2500 v~ i isol 1ma t = 1s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.3/ 11.5 nm/lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 500 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss 50 a v gs = 0v t j = 125 c 3 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 80 m hiperfet tm power mosfet q2-class IXFN66N50Q2 s g s d minibloc, sot-227 b (ixfn) e153432 g = gate d = drain s = source either source terminal at minibloc can be used as main or kelvin source features z double metal process for low gate resistance z minibloc, with aluminium nitride isolation z unclamped inductive switching (uis) rated z low package inductance z fast intrinsic rectifier applications z dc-dc converters z switched-mode and resonant-mode power supplies z dc choppers z pulse generators advantages z easy to mount z space savings z high power density
ixys reserves the right to change limits, test conditions, and dimensions. IXFN66N50Q2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 30 44 s c iss 9125 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 1200 pf c rss 318 pf t d(on) 32 ns t r 16 ns t d(off) 60 ns t f 10 ns q g(on) 200 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 47 nc q gd 98 nc r thjc 0.17 c /w r thcs 0.05 c /w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 66 a i sm repetitive, pulse width limited by t jm 264 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 250 ns q rm 1 c i rm 10 a notes1: pulse test, t 300 s; duty cycle, d 2%. sot-227b outline ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 i f = 25a, -di/dt = 100a/ s v r = 100v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external)
? 2008 ixys corporation, all rights reserved IXFN66N50Q2 fig. 2. extended output characteristics @ 25 c 0 20 40 60 80 100 120 140 160 02468101214161820 v d s - volts i d - amperes 7v v gs = 10v 8v 5v 6v fig. 3. output characteristics @ 125 c 0 10 20 30 40 50 60 70 02468101214 v d s - volts i d - amperes v gs = 10v 7v 6v 3.5v 4.5v 5v fig. 1. output characteristics @ 25 c 0 10 20 30 40 50 60 70 01234567 v d s - volts i d - amperes v gs = 10v 8v 7v 6v 4.5v 5v 5.5v fig. 4. r ds(on ) normalized to 0.5 i d25 v alue vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 66 a i d = 33 a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 -50-25 0 255075100125150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) normalized to 0.5 i d25 value vs. i d 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 0 20406080100120140160 i d - amperes r d s ( o n ) - normalized t j = 125 c t j = 25 c v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. IXFN66N50Q2 fig. 11. capacitance 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mh z fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v g s - volts v ds = 250 v i d = 33a i g = 10ma fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 100 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v g s - volts i d - amperes t j = 125 c 25 c - 40 c fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 0 20 40 60 80 100 120 140 i d - amperes g f s - siemens t j = - 40 c 25 c 125 c fig. 9. source current vs. source-to-drain voltage 0 20 40 60 80 100 120 140 160 180 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v s d - volts i s - amperes t j = 125 c t j = 25 c fig. 12. forward-bias safe operating area 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 100s 1ms dc r ds(on) limi t 10ms 25 s t j = 150oc t c = 25oc single pulse
? 2008 ixys corporation, all rights reserved ixys ref: f_66n50q2(94) 5-28-08-c fig. 13. maximum transient thermal impedance 0.00 0.01 0.10 1.00 0.1 1 10 100 1000 10000 pulse width - milliseconds z ( t h ) j c - o c / w
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